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november 2011 doc id 18223 rev 2 1/16 16 STL160N3LLH6 n-channel 30 v, 0.0011 , 35 a powerflat? 5x6 stripfet? vi deepgate? power mosfet features r ds(on) * q g industry benchmark extremely low on-resistance r ds(on) very low switching gate charge high avalanche ruggedness low gate drive power losses applications switching applications description this device is an n-channel power mosfet developed using the 6 th generation of stripfet? deepgate? technology, with a new gate structure. the resulting power mosfet exhibits the lowest r ds(on) in all packages. figure 1. internal schematic diagram order code v dss r ds(on) max i d STL160N3LLH6 30 v 0.0013 35 a (1) 1. the value is rated according r thj-pcb powerflat? 5x6 1 2 3 4 !-6 "ottom6iew $ $ $ $ 3 3 3 ' 4op6iew table 1. device summary order code marking package packaging STL160N3LLH6 160n3llh6 powerflat? 5x6 tape and reel www.st.com
contents STL160N3LLH6 2/16 doc id 18223 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
STL160N3LLH6 electrical ratings doc id 18223 rev 2 3/16 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 30 v v gs gate-source voltage 20 v i d (1) 1. the value is rated according to r thj-c . drain current (continuous) at t c = 25 c 160 a i d (1) drain current (continuous) at t c = 100 c 100 a i d (2) 2. the value is rated according to r thj-pcb. drain current (continuous) at t pcb = 25 c 35 a i d (2) drain current (continuous) at t pcb =100 c 21.8 a i dm (3) 3. pulse width limited by safe operating area. drain current (pulsed) 140 a p tot (1) total dissipation at t c = 25 c 80 w p tot (3) total dissipation at t pcb = 25 c 4 w derating factor 0.03 w/c t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case (drain, steady state) 1.56 c/w r thj-pcb (1) 1. when mounted on fr-4 board of 1inch2, 2oz cu, t < 10 sec. thermal resistance junction-ambient 31.3 c/w table 4. avalanche data symbol parameter value unit i av not-repetitive avalanche current, (pulse width limited by t j max) 35 a e as single pulse avalanche energy (starting t j = 25 c, i d = i av ) 900 mj
electrical characteristics STL160N3LLH6 4/16 doc id 18223 rev 2 2 electrical characteristics (t case = 25 c unless otherwise specified). table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = 30 v, v ds = 30 v at t c = 125 c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 1 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 17.5 a v gs = 4.5 v, i d = 17.5 a 0.0011 0.0016 0.0013 0.0020 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f=1 mhz, v gs =0 - 6375 1230 675 - pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =15 v, i d = 35 a v gs =4.5 v (see figure 14) - 61.5 20 24 - nc nc nc r g gate input resistance f=1 mhz gate dc bias = 0 test signal level = 20 mv open drain -1.4 -
STL160N3LLH6 electrical characteristics doc id 18223 rev 2 5/16 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd =15 v, i d = 17.5 a, r g =4.7 , v gs =10 v (see figure 13) - 18.5 32 107.5 54 - ns ns ns ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 35 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 140 a v sd (2) 2. pulsed: pulse duration=300s, duty cycle 1.5%. forward on voltage i sd = 35 a, v gs =0 - 1.1 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 35 a, di/dt = 100 a/s, v dd =25 v - 37.2 36 1.9 ns nc a
electrical characteristics STL160N3LLH6 6/16 doc id 18223 rev 2 2.1 electrical characterist ics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized b vdss vs temperature figure 7. static drain-source on resistance i d 100 10 1 0.1 0.1 1 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 100m s 1 s 10m s tj=150c tc=25c s ingle p u l s e am0 8 599v1 i d 60 40 20 0 0 1.0 v d s (v) 2.0 (a) 0.5 1.5 2.5 8 0 100 3 v 4v v g s =10v 120 140 160 1 8 0 am0 8 600v1 i d 60 40 20 0 0 4 v g s (v) 8 (a) 2 6 10 8 0 100 1 3 5 7 9 120 140 v d s =2v am0 8 601v1 bv d ss -75 t j (c) (norm) -25 75 25 125 0.90 0.95 1.00 1.05 1.10 175 am0 8 602v1 r d s (on) 1.05 1.00 0.95 0 20 i d (a) ( ) 10 3 0 1.10 1.15 v g s =10v 515 25 3 5 am0 8 60 3 v1
STL160N3LLH6 electrical characteristics doc id 18223 rev 2 7/16 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics v g s 6 4 2 0 0 20 q g (nc) (v) 8 0 8 40 60 10 v dd =15v i d = 3 5a 100 12 120 am0 8 604v1 c 1000 0 0 10 v d s (v) (pf) 5 20 ci ss co ss cr ss 2000 3 000 4000 5000 6000 7000 8 000 9000 15 25 3 0 am0 8 605v1 v g s (th) 0. 8 0.6 0.4 0.2 -75 t j (c) (norm) -25 1.0 75 25 125 175 1.2 am0 8 606v1 r d s (on) 1.2 0. 8 0.4 -75 t j (c) (norm) -25 75 25 125 175 0.6 1.0 1.4 1.6 1. 8 am0 8 607v1 v s d 0 20 i s d (a) (v) 10 3 0 3 5 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 25 15 5 t j =-55c t j =25c t j =175c am0 8 60 8 v1
test circuits STL160N3LLH6 8/16 doc id 18223 rev 2 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive wavefor m figure 18. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STL160N3LLH6 package mechanical data doc id 18223 rev 2 9/16 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data STL160N3LLH6 10/16 doc id 18223 rev 2 table 9. powerflat? 5x6 type c-b mechanical data dim. mm min. typ. max. a 0.80 0.83 0.93 a1 0 0.02 0.05 a3 0.20 b 0.35 0.40 0.47 d5.00 d1 4.75 d2 4.15 4.20 4.25 e6.00 e1 5.75 e2 3.43 3.48 3.53 e4 2.58 2.63 2.68 e1.27 l 0.70 0.80 0.90
STL160N3LLH6 package mechanical data doc id 18223 rev 2 11/16 figure 19. powerflat? 5x6 type c-b drawing s eating plane 0.0 8 c a a1 0.1 c a 3 c 72 8 646 3 _rev_h e/2 e 1 pin 1 identification expo s ed pad b 8 x d2/2 d2 e4 e2 bottom view top view pin 1 identification 1 d1 d e1 e e/2 d/2
package mechanical data STL160N3LLH6 12/16 doc id 18223 rev 2 table 10. powerflat? 5x6 type s-c mechanical data dim. mm min. typ. max. a 0.80 1.00 a1 0.02 0.05 a2 0.25 b 0.30 0.50 d5.20 e6.15 d2 4.11 4.31 e2 3.50 3.70 e1.27 e1 0.65 l 0.715 1.015 k 1.05 1.35
STL160N3LLH6 package mechanical data doc id 18223 rev 2 13/16 figure 20. powerflat? 5x6 type s-c mechanical data "ottomview 3ideview 4opview ?$?type#
package mechanical data STL160N3LLH6 14/16 doc id 18223 rev 2 figure 21. powerflat? 5x6 recommended footprint (dimensions in mm) footprint 5. 3 5 4.41 1.27 0.62 0.9 8 0.95 6.26 4. 33 3 . 8 6
STL160N3LLH6 revision history doc id 18223 rev 2 15/16 5 revision history table 11. document revision history date revision changes 10-nov-2010 1 first release. 10-nov-2011 2 section 4: package mechanical data has been updated. minor text changes.
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